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Gate-Induced Static and Dynamic Nonlinearity Characteristics of Bilayer Graphene Field-Effect Transistors (Bi-GFETs)

Varun Kumar Kakar1,2, Munindra3, Pankaj Kumar Pal1

  • 1Department of Electronics Engineering, National Institute of Technology, Srinagar Garhwal 246174, India.

Micromachines
|September 27, 2025
PubMed

Keywords:
bilayer graphenebilayer graphene field-effect transistor (Bi-GFETs)drain current characteristicnonlinearity and scalability

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