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Large-Area Nanostructure Fabrication with a 75 nm Half-Pitch Using Deep-UV Flat-Top Laser Interference Lithography.

Kexin Jiang1, Mingliang Xie1, Zhe Tang2

  • 1School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.

Sensors (Basel, Switzerland)
|September 27, 2025
PubMed
Summary

We developed a cost-effective deep-ultraviolet laser interference lithography system for large-area nanopatterning. This method enables high-throughput fabrication of periodic nanostructures for advanced photonic and sensing devices.

Keywords:
beam shaperdual-beam interferometerlarge-area patterninglaser interference lithography (LIL)surface-enhanced Raman spectroscopy (SERS)

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Optics

Background:

  • Achieving large-area periodic nanostructures with high resolution is critical for advanced devices.
  • Conventional near-ultraviolet laser interference lithography (LIL) faces limitations in uniformity and exposure latitude for sub-100 nm features.
  • Cost-effective laboratory systems for producing such nanostructures are highly sought after.

Purpose of the Study:

  • To develop a cost-effective deep-ultraviolet (DUV) dual-beam LIL system for large-area nanopatterning.
  • To enable the fabrication of periodic nanostructures with a 75 nm half-pitch on a laboratory scale.
  • To demonstrate the system's capability in creating substrates for chemical sensing applications.

Main Methods:

  • Utilized a 266 nm deep-ultraviolet (DUV) laser source for dual-beam laser interference lithography (LIL).
  • Implemented diffractive flat-top beam shaping to ensure uniform illumination over a large area.
  • Employed independent tuning of incident angle and beam uniformity for precise control over nanostructure dimensions.

Main Results:

  • Successfully patterned one-dimensional (1D) gratings and two-dimensional (2D) arrays with a 150 nm period (75 nm half-pitch) over a 1.0 cm diameter field.
  • Achieved critical-dimension variation below 5 nm (1σ) with smooth edges and near-vertical sidewalls.
  • Fabricated silicon nanodot arrays as surface-enhanced Raman spectroscopy (SERS) substrates with an average enhancement factor of ~1.12 × 10^4 and low intensity variation (11% RSD).

Conclusions:

  • The proposed flat-top DUV-LIL method offers a cost-effective and high-throughput alternative to electron-beam lithography for large-area nanopatterning.
  • The system enables reliable, large-area chemical sensing by overcoming limitations of conventional SERS substrates.
  • This versatile approach is suitable for fabricating centimeter-scale photonic metasurfaces and sensing devices, with potential for wafer-scale integration.