Related Experiment Video
Updated: Jan 16, 2026
10:36
Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
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Reconfigurable Magnetotransport in MnBi2Te4 via Gate and Magnetic Field Tuning
Yuang Jie1, Xiaofan Cai1, Yijie Lin1
1Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
Advanced Materials (Deerfield Beach, Fla.)
|September 27, 2025
Summary
In intrinsic magnetic topological insulators like MnBi2Te4, in-plane magnetic fields tune quantum phases. Researchers observed a gate-tunable magnetoresistance crossover, enabling electrical control over magnetic and electronic states for spintronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Phenomena
Background:
- Intrinsic magnetic topological insulators (MTIs) like MnBi2Te4 offer unique quantum phases.
- Understanding magnetotransport properties is crucial for device applications.
- In-plane magnetic fields are proposed as a tuning parameter for MTIs.
Purpose of the Study:
- Investigate the magnetotransport behavior of few-layer MnBi2Te4.
- Focus on the effects of in-plane magnetic fields.
- Explore gate voltage, temperature, and field angle dependencies.
Main Methods:
- Experimental investigation of few-layer MnBi2Te4.
- Measurements of magnetotransport as a function of gate voltage, temperature, and magnetic field angle.
- Analysis of in-plane magnetic field effects.
Main Results:
- Observed a gate-tunable crossover in magnetoresistance from positive to negative under in-plane fields.
- Demonstrated that in-plane fields induce a transition from antiferromagnetic to in-plane ferromagnetic order.
- Revealed strongly gate-tunable magnetotransport anisotropy through angle-dependent measurements.
Conclusions:
- In-plane magnetic fields effectively modulate spin and charge transport in MnBi2Te4.
- Gate-tunable control over magnetic and electronic phase transitions is achieved.
- These findings advance the development of reconfigurable spintronic and topological devices.
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