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Memristive Behavior in Carrier Accumulation-Based Optical Modulators
Alexander Korneluk1, Katarzyna Brańko1, Tomasz Stefaniuk1
1Faculty of Physics, University of Warsaw, Pasteura 5 St., 02093, Warsaw, Poland.
Nano Letters
|September 29, 2025
Summary
This study presents a novel optoelectronic platform integrating carrier accumulation/depletion and electrochemical metallization effects. This allows for tunable, electrically driven transitions between volatile and nonvolatile optical states in a single device.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Memristive switching and field-effect modulation are key for optoelectronic devices but typically require separate architectures.
- Integrating these complementary effects into a single platform remains a significant challenge.
Purpose of the Study:
- To demonstrate a single optoelectronic device integrating carrier accumulation/depletion (CAL/CDL) and electrochemical metallization (ECM) effects.
- To achieve electrically driven transitions between volatile and nonvolatile optical states by engineering the device architecture and material properties.
Main Methods:
- Fabrication of a Ag/ITO/SiO2/Ag stack with tunable ITO carrier concentration.
- Utilizing spectroscopic ellipsometry and electrical measurements to analyze device performance.
- Investigating field-induced carrier redistribution and ion migration mechanisms.
Main Results:
- Demonstrated electrically driven transitions between volatile (CAL/CDL) and nonvolatile (ECM) optical states within the same device.
- Identified low-voltage modulation via carrier redistribution at the ITO/SiO2 interface.
- Attributed long-term optical drift to ECM-mediated silver ion migration and filament formation.
Conclusions:
- The developed optoelectronic platform successfully integrates CAL/CDL and ECM effects, enabling multifunctional operation.
- This controllable interplay offers a pathway toward advanced optoelectronic components for neuromorphic and photonic in-memory computing.
- The device exhibits distinct memory and modulation modes, paving the way for novel computing architectures.
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