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Published on: March 24, 2019
Absence of orbital current torque in Ta/ferromagnet bilayers
Qianbiao Liu1, Lijun Zhu2,3
1State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
The orbital Hall effect does not generate spin-orbit torque in Ta/ferromagnet systems. Instead, the spin Hall effect of Ta is the sole source of interfacial torque, irrespective of ferromagnet type or thickness.
Area of Science:
- Spintronics
- Condensed Matter Physics
- Materials Science
Background:
- The orbital Hall effect (OHE) is theorized to induce non-local orbital currents and spin-orbit torques (SOTs) in adjacent magnetic layers.
- Investigating the OHE's contribution to SOT is crucial for understanding spintronic device mechanisms.
Purpose of the Study:
- To determine if the OHE in tantalum (Ta) generates non-local orbital currents and SOTs in adjacent ferromagnets (FMs).
- To clarify the dominant mechanism responsible for interfacial torque in Ta/FM heterostructures.
Main Methods:
- Utilized spin-torque ferromagnetic resonance (ST-FMR) to analyze SOT efficiency in various Ta/FM (Ni, NiFe, Fe, FeCoB, FePt) systems.
- Investigated the influence of FM layer thickness on the ST-FMR signal and torque generation.
Main Results:
- Observed a consistently negative SOT efficiency across all tested Ta/FM systems, irrespective of the FM material.
- Identified that the spin Hall effect (SHE) of Ta, not the OHE, is the primary contributor to the interfacial torque.
- Found that previously reported positive torque estimates in some studies were artifacts due to neglecting thickness-dependent self-induced ST-FMR signals in the FM layer.
Conclusions:
- The OHE does not induce significant interfacial torque in Ta/FM systems.
- The SHE of Ta is the dominant source of SOT in these heterostructures.
- Accurate characterization of SOT requires careful consideration of self-induced signals within the FM layer.
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