Related Experiment Video
Updated: Jan 15, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Thermal Transport Characteristics of Wrinkle Interface in Ultraflexible MoSSe-WX2 (X = S, Se) Heterostructure
Lei Huang1,2, Huabing Shu3, Guoqing Wang2
1School of Mechanical Engineering, Southeast University, Nanjing 211189, China.
None:
Thermal transport across interfaces is essential for optimizing the performance of two-dimensional heterostructures in nanoscale thermal management. Here, we explore the interfacial thermal conductance (ITC) of ultraflexible Janus MoSSe-WS2/WSe2 lateral heterostructures through nonequilibrium molecular dynamics simulations. By constructing heterostructures with different orientations and atomic configurations, we demonstrate that ITC is highly sensitive to the interfacial atomic arrangements, strain, temperature, and vacancy distribution. A distinct nonmonotonic dependence of ITC on strain is uncovered, primarily influenced by curvature-induced phonon scattering and anharmonic effects. Phonon wave packet simulations elucidate the frequency-dependent transmission behavior across the heterointerface, highlighting a significant suppression of high-frequency phonon transport. Moreover, vacancies in the transition metal layer can exert a more pronounced impact on ITC compared to those in the chalcogen layers. Our findings elucidate the microscopic mechanisms underlying thermal transport in Janus-based heterostructures and offer design guidelines for their applications in thermoelectric and heat dissipation technologies.
Related Concept Videos
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

