Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET01:16

MOSFET

1.2K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.2K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

785
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
785
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

820
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
820
Characteristics of MOSFET01:17

Characteristics of MOSFET

936
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
936
Switching of BJT01:22

Switching of BJT

778
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
778
MOS Capacitor01:25

MOS Capacitor

1.5K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.5K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Ferroelectric-Polarization-Modulated 2D Floating-Gate Memory Enabling a 10<sup>6</sup> On/Off Ratio under ±1 V Gate-Voltage Sweep.

Nano letters·2026
Same author

Complete Video-Assisted Thoracoscopic Surgery vs Open Surgery for Rib Fracture: Impacts on Postoperative Inflammation and Foreign Body Sensation.

Annali italiani di chirurgia·2026
Same author

Antiferroelectric polarization enabling physical activation in CuBiP<sub>2</sub>Se<sub>6</sub> for medical image processing.

Nature communications·2026
Same author

Synergistic multi-d orbital hybridization in a PtFeCoNiMnMo high-entropy alloy nanocatalyst for enhanced alkaline hydrogen evolution reaction.

Physical chemistry chemical physics : PCCP·2026
Same author

Coupled polarization dynamics and charge tunneling enable reconfigurable heterojunctions.

Nature communications·2026
Same author

Ionic-Electronic Coupling Enables Stable and Precise Memristive Switching through Reversible Crystalline-Solid Solution Transition.

Nano letters·2025
Same journal

Sodium-Based Battery Component Design: Imitating Lithium or Forging New Paths?

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

Enhancing Birefringence of Sulphates by Polarity Modification in Planar Cations.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

In Situ Atomic-Scale Observation of Preferential Premelting at Oxide Crystal Defects.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

Thickness-Dependent Semiconductor-Metal Transition in Two-Dimensional Nonlayered Magnetic CuCo<sub>2</sub>S<sub>4</sub>.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

Programmable Control Over Radical and Non‑Radical Pathways in Fenton‑Like Catalysis via Carbon‑Encapsulated Iron Nanoreactors.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

Self-Powered MXene@Perovskite Thermoelectric Skin for Multimodal Mid-Infrared Sensing and Human Signal Recognition.

Small (Weinheim an der Bergstrasse, Germany)·2026
See all related articles

Related Experiment Video

Updated: Jan 15, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.4K

Multifunctional Device With Switchable Hysteresis Direction Based on Multilayer rMoS2.

Zirui Zhang1,2, Ce Li1,2, Tianze Yu1,2

  • 1Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China.

Small (Weinheim an Der Bergstrasse, Germany)
|October 7, 2025
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel multifunctional device using 2D ferroelectric materials. This device integrates two transistor modes, offering tunable electronic and optoelectronic functions for advanced applications.

Keywords:
dual‐mode optoelectronic modulationhysteresis direction reversalneuromorphic computingrhombohedral molybdenum disulfide (rMoS2)sliding ferroelectricity

More Related Videos

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.7K
Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice
08:57

Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice

Published on: August 10, 2019

11.5K

Related Experiment Videos

Last Updated: Jan 15, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.4K
Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.7K
Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice
08:57

Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice

Published on: August 10, 2019

11.5K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • 2D ferroelectric materials show promise for electronic and optoelectronic devices.
  • Existing devices often lack multi-functionality and flexibility.
  • Need for adaptable devices capable of switching between operational modes.

Purpose of the Study:

  • To present a multifunctional device based on a multilayer rhombohedral molybdenum disulfide (rMoS2)/hexagonal boron nitride (h-BN) heterostructure.
  • To demonstrate electrically tunable hysteresis direction for dual-mode operation.
  • To explore optoelectronic programmability and emulation of biological synaptic functions.

Main Methods:

  • Fabrication of a multilayer rMoS2/h-BN heterostructure.
  • Integration of two operational modes: Ferroelectric semiconductor field-effect transistor (FeSFET) and Ferroelectric-Floating gate field-effect transistor (Fe-FGFET).
  • Characterization of device performance, including conductance states, retention time, cycle stability, and synaptic emulation.

Main Results:

  • The dual-mode device achieved electrically tunable hysteresis direction.
  • Demonstrated optoelectronic programmability with >4-bit conductance states and >120s retention.
  • Successfully emulated biological synaptic functions, including tunable short-term to long-term potentiation and paired-pulse facilitation.

Conclusions:

  • Multilayer rMoS2 is a viable material for multifunctional electronics.
  • The developed device offers enhanced flexibility and potential for integrated applications.
  • This work paves the way for advanced ferroelectric devices utilizing 2D ferroelectrics.