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Enhancing Physical Randomness in Ta₂O₅/HfO₂ Based Memristors through Electrode Engineering for True Random Number

Bei Jiang^1,2, Yong Wang¹, Yahui Qing¹

¹Key Laboratory of Intelligent Sensing System and Security of the Ministry of Education, Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Microelectronics, Hubei University, Wuhan 430062, China.

|October 9, 2025

Summary

This summary is machine-generated.

Memristor devices with a unipolar switching characteristic offer enhanced performance for true random number generators (TRNGs). This study demonstrates a novel TRNG achieving high throughput and passing rigorous randomness tests for secure applications.

Keywords:

electrode engineering memristor security primitive true random number generator unipolar

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Area of Science:

Materials Science
Electrical Engineering
Computer Science

Background:

True random number generators (TRNGs) are crucial for secure data transmission.
Memristors, leveraging inherent switching variability, offer a promising avenue for TRNGs.
The impact of top electrode materials on memristor characteristics for TRNG applications requires detailed investigation.

Purpose of the Study:

To investigate the performance and instability of Ta₂O₅/HfO₂/Pt memristors with different top electrodes (Ag, Ta, Pt).
To explore the potential of these memristors as entropy sources for TRNG circuits.
To optimize memristor-based TRNGs for enhanced throughput rate and continuity.

Main Methods:

Fabrication and characterization of Ta₂O₅/HfO₂/Pt memristors with Ag, Ta, and Pt top electrodes.
Analysis of memristor switching behaviors (volatility, bipolarity, unipolarity) and corresponding conduction mechanisms.
Integration of unipolar memristors into TRNG circuits and performance evaluation using NIST SP 800-22 randomness tests.

Main Results:

Memristors with Ag, Ta, and Pt electrodes exhibited volatility, bipolarity, and unipolarity, respectively.
Unipolar Pt/Ta₂O₅/HfO₂/Pt devices demonstrated suitability for enhancing TRNG throughput and continuity.
An optimized unipolar memristor-based TRNG achieved a throughput rate of ~160 kb/s and passed all 15 NIST SP 800-22 tests.

Conclusions:

Unipolar memristors serve as effective entropy sources for high-performance TRNGs.
The developed memristor-based TRNG shows significant potential for securing encrypted transmissions in Internet of Things (IoT) applications.
Tailoring memristor characteristics through electrode selection is key to optimizing TRNG performance.