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Process Temperature Control for Low Dishing in CMP.

Yeongil Shin¹, Jongmin Jeong¹, Jiho Shin¹

¹Graduated School of Mechanical Engineering, Pusan National University, Busan 46703, Republic of Korea.

Materials (Basel, Switzerland)

|October 16, 2025

Summary

This summary is machine-generated.

Process temperature is crucial for controlling copper dishing during chemical mechanical planarization (CMP). Optimizing temperature minimizes dishing, ensuring precise control for hybrid bonding in high-performance semiconductors.

Keywords:

chemical mechanical planarization (CMP)dishing pad cooling system selectivity temperature vortex tube

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Area of Science:

Materials Science
Semiconductor Manufacturing
Chemical Engineering

Background:

High-performance semiconductors demand hybrid bonding, necessitating precise copper dishing control.
Chemical Mechanical Planarization (CMP) is vital for achieving this control.
Existing methods modifying slurry or mechanics have proven insufficient for optimal dishing control.

Purpose of the Study:

To investigate the impact of process temperature on CMP performance.
To demonstrate temperature's role in integrating chemical and mechanical aspects of CMP.
To develop a method for precise temperature control in CMP.

Main Methods:

Evaluated removal rates of Cu, Ta, and SiO2 films using blanket wafer experiments.
Analyzed film removal rates as a function of temperature and activation energy (Arrhenius-type behavior).
Developed a vortex-tube-based pad cooling system for precise temperature regulation.

Main Results:

Film removal rates exhibited Arrhenius-type behavior with temperature.
A process temperature of 30 °C balanced selectivity and minimized dishing on patterned wafers.
Temperature control reduced dishing from 12-16 nm to 4 nm and below 1 nm for 100 µm and 50 µm patterns, respectively.

Conclusions:

Process temperature is a critical, yet often overlooked, parameter in CMP.
Precise temperature control is essential for managing selectivity and minimizing copper dishing.
Optimized temperature control via a novel cooling system meets hybrid bonding requirements.