Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.4K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.4K
Potentiometry: Membrane Electrodes01:15

Potentiometry: Membrane Electrodes

1.5K
Membrane electrodes, also known as p-ion electrodes, use membranes that selectively interact with free analyte ions, generating a potential difference across the membrane. The resulting membrane potential, known as the asymmetry potential, is not zero even when analyte concentrations on both sides of the membrane are equal. The membrane's response is typically not selective to a single analyte but proportional to the concentration of all ions in the sample solution capable of interacting at...
1.5K
Capacitor With A Dielectric01:18

Capacitor With A Dielectric

4.8K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
4.8K
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

5.8K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
5.8K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Polar nano-regions enable large spin Hall conductivity in metallic PtCoO<sub>2</sub>.

Nature materials·2026
Same author

Revealing buried ferroelectric topologies by depth-resolved electron diffraction imaging.

Nature communications·2026
Same author

Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage.

Nanoscale advances·2026
Same author

Triple-Mode Ferroelectric Thin-Film Transistor for Hybrid Electrical-Optical Reservoir Computing.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Author Correction: Magnon confinement in epitaxial antiferromagnetic oxide heterostructures.

Nature materials·2026
Same author

Event-Driven Neuromorphic Gaze Decoding via e-Skin Electrooculography.

ACS nano·2026
Same journal

Taphonomic analysis at Liang Bua reveals the behavioral and technological capabilities of <i>Homo floresiensis</i>.

Science advances·2026
Same journal

Targeting granule initiation and amyloplast structure to create giant starch granules in wheat.

Science advances·2026
Same journal

A meta-analysis of carbon losses and gains from tropical moist forest degradation and regeneration.

Science advances·2026
Same journal

Ancient DNA reveals elite dynastic rule among Iron Age Eurasian Steppe nomads.

Science advances·2026
Same journal

Targeting astrocytic Dp71 attenuates BBB disruption after traumatic brain injury through WTAP-associated m<sup>6</sup>A regulation of MMP2.

Science advances·2026
Same journal

Pancreatic α cells are required for nutrient homeostasis by regulating dynamic β cell networks in islets.

Science advances·2026
See all related articles

Related Experiment Video

Updated: Jan 9, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.6K

Single-crystalline BaTiO3-based ferroelectric capacitive memory via membrane transfer.

Xinyuan Zhang1, Sangho Lee2,3, Jung-El Ryu2,3

  • 1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.

Science Advances
|December 5, 2025
PubMed
Summary
This summary is machine-generated.

Single-crystalline barium titanate (BTO) membranes enable advanced ferroelectric capacitive memory (FeCAP) devices. This BTO-based FeCAP offers superior performance over hafnia-based options for low-power computing.

More Related Videos

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

11.5K
Fabrication of Carbon-Based Ionic Electromechanically Active Soft Actuators
14:42

Fabrication of Carbon-Based Ionic Electromechanically Active Soft Actuators

Published on: April 25, 2020

8.7K

Related Experiment Videos

Last Updated: Jan 9, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.6K
Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

11.5K
Fabrication of Carbon-Based Ionic Electromechanically Active Soft Actuators
14:42

Fabrication of Carbon-Based Ionic Electromechanically Active Soft Actuators

Published on: April 25, 2020

8.7K

Area of Science:

  • Materials Science
  • Solid-State Physics
  • Electrical Engineering

Background:

  • Ferroelectric capacitive memory (FeCAP) is crucial for low-power, high-density in-memory computing.
  • Hafnia-based FeCAPs show silicon compatibility but have limitations in memory window and switching fields.
  • Single-crystalline barium titanate (BTO) membranes offer potential for improved FeCAP performance.

Purpose of the Study:

  • To develop a high-performance FeCAP device using a single-crystalline BTO membrane.
  • To engineer device structure and epitaxy for enhanced polarization asymmetry.
  • To demonstrate the transferability and performance retention of BTO FeCAPs on silicon platforms.

Main Methods:

  • Epitaxial lift-off and transfer of single-crystalline BTO membranes onto silicon.
  • Engineering of device structure and epitaxy to induce polarization asymmetry.
  • Characterization of capacitance-voltage (C-V) properties and memory behavior.

Main Results:

  • BTO-based FeCAP achieved a wide memory window of 308 picofarads.
  • A low switching field of 0.005 MV/cm was recorded for the BTO FeCAP.
  • Performance metrics significantly outperformed conventional hafnia-based FeCAPs.
  • Key properties were maintained after transfer to a silicon platform.

Conclusions:

  • Single-crystalline BTO membranes provide a superior alternative for FeCAP devices.
  • The developed BTO FeCAP demonstrates enhanced memory characteristics.
  • This approach facilitates integration of high-quality BTO into silicon-based technologies for future logic/memory applications.