Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Intermittent short-term low dose cyclosporine may help break the itch-scratch cycle in uremic pruritus: A retrospective study.

JAAD international·2026
Same author

A thermally actuated 3D foldable bioelectronic interface for multimodal electrophysiological and cytokine profiling of human spinal cord organoids.

Biosensors & bioelectronics·2026
Same author

Twist-controlled modulation of quantum emitters in hexagonal boron nitride.

Science advances·2026
Same author

Strain-Driven Altermagnetic Spin-Splitting Effect in RuO<sub>2</sub>.

Nano letters·2026
Same author

Acetate treatment after zygotic genome activation enhances developmental competence of porcine IVF embryos.

Theriogenology·2026
Same author

Flexible laser-induced graphene biosensor enables real-time, in vivo profiling of wound healing cytokine dynamics.

Journal of nanobiotechnology·2026

Related Experiment Video

Updated: May 12, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Triple-Mode Ferroelectric Thin-Film Transistor for Hybrid Electrical-Optical Reservoir Computing.

Hyeonho Lee1, Seungjun Lee1,2, Tae-Hyeon Kim3

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul, Republic of Korea.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|May 11, 2026
PubMed
Summary

This study introduces a novel hardware reservoir computing (RC) system using a single ferroelectric thin-film transistor (FeTFT). This FeTFT integrates three memory modes, achieving high accuracy in pattern recognition tasks.

Keywords:
ferroelectric thin‐film transistorfield effecthafnium zirconium oxideindium gallium zinc oxideneuromorphic devicereservoir computingtriple mode memory

More Related Videos

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

Related Experiment Videos

Last Updated: May 12, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

Area of Science:

  • Materials Science and Engineering
  • Neuromorphic Computing
  • Solid State Physics

Background:

  • Reservoir computing (RC) offers a promising approach for complex system modeling.
  • Hardware implementations of RC can overcome limitations of software-based simulations.
  • Developing single-device solutions for multi-modal memory is crucial for advanced computing.

Purpose of the Study:

  • To propose and demonstrate a fully hardware-based reservoir computing (RC) system.
  • To integrate non-volatile and volatile memory characteristics into a single ferroelectric thin-film transistor (FeTFT).
  • To achieve high recognition accuracy for complex datasets using the developed hardware.

Main Methods:

  • Fabrication of a novel FeTFT using a Si3N4/Hf0.5Zr0.5O2 (HZO)/indium gallium zinc oxide (IGZO) tri-layer stack.
  • Operation of the FeTFT in three distinct memory modes: electric long-term (LT), electric short-term (ST), and optical ST.
  • Utilization of ferroelectric polarization switching, charge trapping, and optical ionization mechanisms for memory functions.
  • Implementation of a hybrid mapping model for the RC system.

Main Results:

  • Successful integration of non-volatile (electric LT) and volatile (electric ST, optical ST) memory characteristics within a single FeTFT.
  • Demonstration of excellent endurance and retention in the non-volatile electric LT mode (readout layer).
  • Exhibition of short-term memory characteristics (e.g., paired-pulse facilitation) in electric and optical ST modes (reservoir layer).
  • Achieved a high recognition accuracy of 92.43% on the Modified National Institute of Standards and Technology (NIST) dataset.

Conclusions:

  • The proposed single-FeTFT system effectively implements a hardware-based RC system.
  • The hybrid memory modes enable efficient processing for complex tasks like pattern recognition.
  • This work paves the way for advanced, compact, and energy-efficient neuromorphic computing hardware.