Related Experiment Video
Updated: Jan 6, 2026

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
Published on: November 16, 2018
Bonding Mechanisms of BTO-NZF Laminated Cofired Bodies Featuring High-Quality Heterojunctions
Ping-An Tan1,2, Zi-Hang Chen1,2, Ming-Fei Cheng1,2
1School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, PR China.
Abstract:
The shrinkage rate of Ni0.6Zn0.4Fe1.8O4 (NZF) ferrite was controlled to enable cofiring with BaTiO3 (BTO) at 1250 °C, forming BTO-NZF laminated structures. Postcofiring microstructural analysis revealed a well-bonded interface with minimal elemental interdiffusion. Notably, Ti4+ exhibited the highest diffusion coefficient (1.60 ± 0.05 × 10-12 cm2/s). Unidentified phases on the NZF side effectively restricted Ba2+ and Ti4+ diffusion. The BTO-NZF heterojunction consisted primarily of nanoscale amorphous layers containing Ba2+ and coherent crystalline regions. The dense amorphous barrier layer not only ensured strong interfacial bonding but also significantly suppressed interdiffusion. High-quality heterojunction formation was influenced by four primary factors, including the presence of similar ionic radii and interplanar spacings, amorphous barrier layers, and a certain concentration of large-radius ions. Magnetic characterization showed that NZF had a saturation magnetization (Ms) of 70.29 ± 0.50 emu/g, a coercivity (Hc) of 8.89 ± 0.50 Oe, and a remanent magnetization (Mr) of 1.01 emu/g. The relative dielectric constant (εr) of BTO ranged from 1490 to 2500 (at 1 MHz), while the dielectric loss tangent (tanδ) varied between 4 × 10-3 and 1.25 × 10-2. These findings offer valuable guidance for selecting cofired laminated substrates and designing high-performance heterojunctions. Moreover, the resulting cofired laminates exhibit excellent electromagnetic properties, demonstrating strong potential for magnetoelectric coupling applications.
Related Concept Videos
Valence Bond Theory
Hybridization of Atomic Orbitals I
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Bonding in Metals

