Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.5K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.5K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

782
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
782
Understanding Memory01:19

Understanding Memory

1.3K
Memory is the retention of information or experiences over time, facilitated through three main processes: encoding, storage, and retrieval. Encoding is the process of inputting information into the memory system. For instance, when listening to a lecture, watching a play, reading a book, or having a conversation, the brain is actively encoding information. This initial stage involves transforming sensory input into a form that can be processed and stored by the brain. Various factors, such as...
1.3K
MOSFET01:16

MOSFET

1.2K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.2K
Characteristics of MOSFET01:17

Characteristics of MOSFET

926
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
926
Field Effect Transistor01:29

Field Effect Transistor

1.1K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Engineering temperature- and radiation-resistant van der Waals oxide optoelectronics via heteroatom-intercalation.

Nature communications·2026
Same author

S-atom dislocation-induced room-temperature ferroelectricity in two-dimensional α-MnS semiconductor.

Nature communications·2026
Same author

Ferroelectricity-modulated asymmetric van der Waals heterostructure for ultralow-power neuromorphic synapse and logic-in-memory operations.

Nature communications·2026
Same author

Anion-Swapped Antiperovskite X<sub>3</sub>AB: Stability Evaluation and Photovoltaic Potential From First-Principles Study.

ChemSusChem·2026
Same author

Metallic tellurium for p-type contacts of two-dimensional MoTe<sub>2</sub> field-effect transistors.

Nature communications·2026
Same author

Ferroelectricity-driven strain-mediated magnetoelectric coupling in two-dimensional multiferroic heterostructure.

Nature communications·2025
Same journal

Demonstration of a quantum C-NOT gate in a time-multiplexed fully reconfigurable photonic processor.

Nature communications·2026
Same journal

Nonlinear quantum light source with van der Waals ferroelectric NbOX<sub>2</sub> (X = Br, I).

Nature communications·2026
Same journal

Antagonistic histone H2A variants and autonomous heterochromatin formation shape epigenomic patterns in Arabidopsis.

Nature communications·2026
Same journal

The long tail of nitrate pollution in groundwater challenges governance of global water quality.

Nature communications·2026
Same journal

Select microbial metabolites promote tau aggregation in a murine tauopathy model.

Nature communications·2026
Same journal

Warming climate has lengthened global intense tropical cyclone seasons.

Nature communications·2026
See all related articles

Related Experiment Video

Updated: Jan 14, 2026

Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

13.2K

11-bit two-dimensional floating-gate memories.

Yanrong Wang1, Yuchen Cai2,3, Feng Wang4,5

  • 1Institute of Semiconductor, Henan Academy of Sciences, Zhengzhou, P. R. China.

Nature Communications
|October 20, 2025
PubMed
Summary
This summary is machine-generated.

We developed 11-bit two-dimensional (2D) MoS2 floating-gate memories (FGMs) for neuromorphic computing. These devices offer high state capacity and low noise, advancing efficient data-centric applications.

More Related Videos

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.3K

Related Experiment Videos

Last Updated: Jan 14, 2026

Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

13.2K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.3K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • Floating-gate memories (FGMs) are crucial for efficient neuromorphic computing.
  • Limited single-device state capacity hinders precision computing applications.

Purpose of the Study:

  • To demonstrate high-bit-capacity 2D FGMs using MoS2.
  • To enhance FGM performance for neuromorphic hardware.

Main Methods:

  • Fabrication of 2D MoS2 FGMs with bismuth electrodes.
  • Utilized a dual-pulse state editing scheme for stability.
  • Characterized device performance including state levels, speed, retention, and endurance.

Main Results:

  • Achieved 11-bit resolution (2,249 levels) with 100 μA on-state current and 10^8 on/off ratio.
  • Reduced current noise by 3x due to Schottky barrier-free interfaces.
  • Demonstrated 230 ns operation speed, >10^4 s retention, >10^5 cycles endurance, and stable low noise at 85°C.

Conclusions:

  • 2D MoS2 FGMs with bismuth electrodes show promise for high-bit-density, low-power neuromorphic hardware.
  • Interfacial defects limit state capacity, with potential for 17-bit resolution.
  • Gate-injection operation ensures low noise and stability over extended cycling.