Related Experiment Video
Updated: Jan 14, 2026

Author Spotlight: Advancing Energy Solutions Using Nanocomposites as Processed Thermoelectric Materials
Published on: May 17, 2024
Energy characteristics of the molten selenium-tellurium system
Bagdaulet Kenzhaliyev1, Sergey Trebukhov1, Valeriy Volodin1
1Laboratory of Vacuum Processes, Institute of Metallurgy and Ore Beneficiation JSC, Satbayev University, Shevchenko Str. 29/133, 050010, Almaty, Republic of Kazakhstan.
Abstract:
The energy functions of the components were determined based on additional studies intended to determine the values of total pressure and vapor composition over liquid solutions of the selenium-tellurium system: entropy, enthalpy, Gibbs energy, and heat capacity change in the existence field of alloys in the state diagram. The liquid-vapor phase transition was calculated to determine the upper boundary of existence of melts - their boiling point. The boiling point of selenium-tellurium liquid solutions corresponds to the dependence: [Formula: see text], where [Formula: see text] - atomic fraction of selenium in the alloy. The formation of azeotropic mixtures was found when the pressure was lowered less than 67.08 kPa (0.66 atm.) in the system and its absence of at atmospheric pressure. The line connecting the points of azeotropic mixtures corresponds to a linear relationship: [Formula: see text]. The energy characteristics of the molten system can be used for thermal engineering and technological calculations when the selenium- and tellurium-based products are obtained. The shape of the boundaries of the melt and vapor coexistence fields at atmospheric pressure and in vacuum, as well as the presence of azeotropic mixtures, indicate the impossibility of direct distillation separation of the system into elements.
More Related Videos
04:09Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics
Published on: August 30, 2024
11:50Metal-silicate Partitioning at High Pressure and Temperature: Experimental Methods and a Protocol to Suppress Highly Siderophile Element Inclusions
Published on: June 13, 2015
Related Concept Videos
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Trends in Lattice Energy: Ion Size and Charge
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Phase Transitions: Melting and Freezing
Third Law of Thermodynamics
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...