p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation...

Area of Science:

• Semiconductor Physics
• Materials Science
• Device Engineering

Background:

• High-power and high-frequency electronics require advanced semiconductor materials.
• Gallium Nitride (GaN) field-effect transistors (FETs) offer superior performance characteristics.
• Existing GaN FETs face challenges in achieving optimal carrier confinement and mobility.

Purpose of the Study:

• To investigate and optimize a novel GaN p-FET device architecture.
• To explore the impact of key design parameters on device performance.
• To achieve high-performance and reliable GaN-based electronics.

Main Methods:

• Device simulation of n-GaN/AlGaN/GaN double heterostructure FETs with a p-GaN source.
• Systematic examination of Mg²⁺ doping, contact metal work function, AlGaN thickness, and Al mole fraction.
• Analysis of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) channel formation.

Main Results:

• An optimized GaN p-FET with a 5 nm p-GaN layer (1×10¹⁹ cm^-3 Mg²⁺) and a 10 nm AlGaN layer (0.2 Al mole fraction) demonstrated superior performance.
• Achieved optimal threshold voltage control (~|4| V), high I_ON/I_OFF ratios (0.39×10¹²), and minimized leakage current.
• A contact metal work function of 5.15 eV significantly reduced contact resistivity and leakage current.

Conclusions:

• The proposed dual-channel GaN p-FET architecture significantly enhances carrier confinement and mobility.
• Precise control over doping, layer thickness, and composition is crucial for optimizing GaN p-FET performance.
• This optimized device configuration is essential for next-generation high-performance and reliable electronic applications.