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Deterministic soliton microcombs in Cu-free photonic integrated circuits
Xinru Ji1,2, Xurong Li1,2, Zheru Qiu1,2
1Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.
Nature
|October 22, 2025
Summary
Researchers overcame thermal instabilities in silicon nitride microcombs by removing copper impurities. This enables deterministic soliton microcomb generation, paving the way for real-world applications.
Area of Science:
- Photonics
- Materials Science
- Integrated Optics
Background:
- Chip-scale optical frequency combs (microcombs) offer broad bandwidth and compact form factors, compatible with wafer-scale manufacturing.
- Silicon nitride (Si3N4) photonic integrated circuits are a leading platform for microcombs, enabling applications in communications, lidar, and frequency synthesis.
- Deterministic soliton microcomb generation is hindered by thermal instabilities, limiting real-world deployment.
Purpose of the Study:
- To overcome thermal effects hindering deterministic soliton generation in Si3N4 microcombs.
- To identify and mitigate the root cause of thermal instabilities in Si3N4 photonic integrated circuits.
Main Methods:
- Investigated thermal effects in Si3N4 waveguides, tracing them to copper impurities from CMOS-grade Si wafers.
- Developed copper removal techniques to reduce impurity concentration and mitigate thermal effects.
- Demonstrated deterministic dissipative Kerr soliton generation using arbitrary and slow laser scanning profiles.
Main Results:
- Successfully identified and reduced copper impurities in Si3N4 waveguides, significantly mitigating thermal instabilities.
- Achieved deterministic soliton microcomb generation with improved stability and performance.
- Validated the effectiveness of the developed copper removal techniques.
Conclusions:
- Copper impurities are a primary cause of thermal instabilities in Si3N4 microcombs.
- The developed copper removal techniques enable deterministic soliton generation, overcoming a key obstacle for microcomb deployment.
- These techniques are readily applicable to foundry fabrication processes for Si3N4 devices.

