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Enhanced power conversion efficiency in high power single spatial mode ridge waveguide diode lasers using extreme
Xiaolei Zhao1, Lance Sweatt2, Taylor Levaur2
1Department of Electrical and Computer Engineering, Clemson University, Clemson, SC, 29634, USA. xiaolei@g.clemson.edu.
Scientific Reports
|October 22, 2025
Summary
High-efficiency, watt-level single-spatial-mode ridge waveguide lasers were developed using an Extreme Triple Asymmetric (ETAS) epitaxial structure. These lasers demonstrate improved conversion efficiency and near-diffraction-limited beam quality for demanding applications.
Area of Science:
- Semiconductor Lasers
- Optoelectronics
- Materials Science
Background:
- High-efficiency, watt-level single-spatial-mode lasers at 97x nm are crucial for various applications.
- Existing Extreme Double Asymmetric (EDAS) structures have limitations in power and efficiency.
Purpose of the Study:
- To investigate and optimize ridge waveguide (RW) lasers utilizing an Extreme Triple Asymmetric (ETAS) epitaxial structure.
- To enhance conversion efficiency and beam quality for high-power single-spatial-mode lasing.
Main Methods:
- Fabrication of RW lasers with an ETAS epitaxial design.
- Optimization of antireflection (AR) and high reflection (HR) coatings.
- Characterization of laser efficiency, output power, and beam quality (M²).
Main Results:
- ETAS-based lasers show over 12% improved conversion efficiency compared to EDAS structures at high powers.
- A 7-µm ridge-width ETAS laser achieved 61.2% peak efficiency at 1W and sustained 60.1% at 1.41W.
- Reduced AR reflectivity (0.5%) yielded near-diffraction-limited single-mode emission (M² < 1.15) up to 1.45A.
Conclusions:
- The ETAS epitaxial structure significantly enhances the performance of ridge waveguide lasers.
- Optimized ETAS lasers offer a promising solution for high-power, high-efficiency, single-spatial-mode applications.
- These findings pave the way for advanced optoelectronic devices.
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