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Updated: Jan 14, 2026

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AlScN Pseudosubstrates for High Indium Content InGaN Alloy Epitaxy.

Jörg Schörmann1, Mario F Zscherp1, Silas A Jentsch1

  • 1Institute of Experimental Physics I and Center for Materials Research, Justus-Liebig-University Giessen, Giessen D-35392, Germany.

ACS Applied Materials & Interfaces
|October 23, 2025
PubMed
Summary
This summary is machine-generated.

Aluminum Scandium Nitride (AlScN) pseudosubstrates improve lattice matching for Indium Gallium Nitride (InGaN) growth. This breakthrough enables high-quality InGaN films, paving the way for efficient red micro-light-emitting diode (micro-LED) devices.

Keywords:
AlScNInGaNlattice-matched templatesmolecular beam epitaxy (MBE)red light emitting diodes

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Optoelectronics

Background:

  • Nitride semiconductors are crucial for UV to green optoelectronics.
  • Lattice mismatch in Indium Gallium Nitride (InGaN) on Gallium Nitride (GaN) hinders red-emitting micro-light-emitting diode (micro-LED) development.
  • Existing substrates cause defects and compositional non-uniformity in InGaN.

Purpose of the Study:

  • To investigate Aluminum Scandium Nitride (AlScN) pseudosubstrates as an alternative for InGaN growth.
  • To overcome lattice mismatch challenges in producing red-emitting InGaN devices.
  • To enhance the quality and uniformity of InGaN films for optoelectronic applications.

Main Methods:

  • Growth of phase-pure AlScN layers (0.1 < Sc content < 0.2) using plasma-assisted molecular beam epitaxy.
  • Deposition of InGaN films on AlScN pseudosubstrates.
  • Characterization of film quality, composition, and optical properties via photoluminescence.

Main Results:

  • AlScN pseudosubstrates provide improved lattice matching for InGaN.
  • High-quality InGaN films with uniform indium distribution were achieved.
  • Absence of compositional pulling effect observed on AlScN-supported films.
  • Room-temperature photoluminescence showed narrow emission at 538 nm.

Conclusions:

  • AlScN pseudosubstrates effectively mitigate lattice mismatch issues in InGaN epitaxy.
  • Uniform InGaN films are attainable, crucial for efficient device performance.
  • AlScN pseudosubstrates show significant promise for developing integrated red micro-LEDs.