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AlScN Pseudosubstrates for High Indium Content InGaN Alloy Epitaxy.
Jörg Schörmann1, Mario F Zscherp1, Silas A Jentsch1
1Institute of Experimental Physics I and Center for Materials Research, Justus-Liebig-University Giessen, Giessen D-35392, Germany.
ACS Applied Materials & Interfaces
|October 23, 2025
Summary
Aluminum Scandium Nitride (AlScN) pseudosubstrates improve lattice matching for Indium Gallium Nitride (InGaN) growth. This breakthrough enables high-quality InGaN films, paving the way for efficient red micro-light-emitting diode (micro-LED) devices.
Area of Science:
- Materials Science
- Semiconductor Physics
- Optoelectronics
Background:
- Nitride semiconductors are crucial for UV to green optoelectronics.
- Lattice mismatch in Indium Gallium Nitride (InGaN) on Gallium Nitride (GaN) hinders red-emitting micro-light-emitting diode (micro-LED) development.
- Existing substrates cause defects and compositional non-uniformity in InGaN.
Purpose of the Study:
- To investigate Aluminum Scandium Nitride (AlScN) pseudosubstrates as an alternative for InGaN growth.
- To overcome lattice mismatch challenges in producing red-emitting InGaN devices.
- To enhance the quality and uniformity of InGaN films for optoelectronic applications.
Main Methods:
- Growth of phase-pure AlScN layers (0.1 < Sc content < 0.2) using plasma-assisted molecular beam epitaxy.
- Deposition of InGaN films on AlScN pseudosubstrates.
- Characterization of film quality, composition, and optical properties via photoluminescence.
Main Results:
- AlScN pseudosubstrates provide improved lattice matching for InGaN.
- High-quality InGaN films with uniform indium distribution were achieved.
- Absence of compositional pulling effect observed on AlScN-supported films.
- Room-temperature photoluminescence showed narrow emission at 538 nm.
Conclusions:
- AlScN pseudosubstrates effectively mitigate lattice mismatch issues in InGaN epitaxy.
- Uniform InGaN films are attainable, crucial for efficient device performance.
- AlScN pseudosubstrates show significant promise for developing integrated red micro-LEDs.
