A polarization-sensitive photodetector based on a b-AsP/In₂Se₃ heterostructure

Area of Science:

• Materials Science
• Condensed Matter Physics
• Optoelectronics

Background:

• Van der Waals (vdW) heterojunctions offer versatile platforms for advanced electronic and optoelectronic devices.
• Polarization-sensitive infrared (IR) photoelectric detection is crucial for applications like optical communication and remote sensing.

Purpose of the Study:

• To develop a high-performance photodetector based on a black arsenic phosphorus (b-AsP) and indium selenide (In2Se3) vdW heterojunction.
• To achieve wide-band detection from solar-blind ultraviolet (SBUV) to mid-wave infrared (MWIR) spectra with polarization sensitivity.

Main Methods:

• Fabrication of a mirror electrode-enhanced b-AsP/In2Se3 vdW heterojunction photodetector.
• Characterization of the device's performance across a wide spectral range (SBUV to MWIR).
• Evaluation of key performance metrics including photoresponsivity, specific detectivity, noise equivalent power, response times, and dichroic ratio.

Main Results:

• The photodetector demonstrated wide-band detection capabilities from SBUV to MWIR.
• Achieved excellent performance metrics: photoresponsivity (R) of 4129.3 A W⁻¹, specific detectivity (D*) of 2.8 × 10¹¹ cm Hz¹/² W⁻¹, and NEP of 2.8 × 10⁻¹⁵ W Hz⁻¹/².
• Exhibited fast response times (rise time τr of 5.8 μs, decay time τd of 2.8 μs) and a high dichroic ratio of ~2.12.

Conclusions:

• The developed b-AsP/In2Se3 vdW heterojunction photodetector shows promise for high-sensitivity and fast-speed polarization-sensitive detection.
• This work provides a viable strategy for creating advanced polarization-sensitive detectors for various applications.
• The device's performance across a broad spectral range highlights its potential in optical communication and sensing.