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Quantum spin Hall effect in III-V semiconductors at elevated temperatures: Advancing topological electronics
Manuel Meyer1, Jonas Baumbach1, Sergey Krishtopenko1,2
1Julius-Maximilians-Universität Würzburg, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Lehrstuhl für Technische Physik, Am Hubland, 97074 Würzburg, Germany.
Science Advances
|October 24, 2025
Summary
Researchers demonstrate the quantum spin Hall effect (QSHE) in a novel InAs/GaInSb trilayer system. This breakthrough enables robust, higher-temperature operation for topological electronics.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Phenomena
Background:
- The quantum spin Hall effect (QSHE) is crucial for dissipationless, spin-polarized transport in topological insulators.
- Practical applications are limited by scalability, low-temperature requirements, and unstable transport.
Purpose of the Study:
- To demonstrate the QSHE in a scalable, higher-temperature operating system.
- To overcome limitations of current topological insulator platforms.
Main Methods:
- Fabrication of an InAs/GaInSb/InAs trilayer quantum well structure.
- Electrical transport measurements in local and nonlocal configurations.
- Tuning the Fermi level via electric field to probe the energy gap.
Main Results:
- Quantized resistance values were observed, independent of device length, confirming the QSHE.
- Helical edge transport stability was achieved up to 60 Kelvin.
- The system demonstrated scalability, reproducibility, and electric field tunability.
Conclusions:
- The InAs/GaInSb system is a promising platform for practical topological electronics.
- This work advances the development of devices utilizing topological functionalities at higher operating temperatures.
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