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Related Concept Videos

Preparation and Reactions of Sulfides02:26

Preparation and Reactions of Sulfides

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Sulfides are the sulfur analog of ethers, just as thiols are the sulfur analog of alcohol. Like ethers, sulfides also consist of two hydrocarbon groups bonded to the central sulfur atom. Depending upon the type of groups present, sulfides can be symmetrical or asymmetrical. Symmetrical sulfides can be prepared via an SN2 reaction between 2 equivalents of an alkyl halide and one equivalent of sodium sulfide.
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Sulfur redox mediator for low-temperature flexible amorphous oxide CMOS electronics.

Mingyang Wang1, Taoyu Zou2, Youjin Reo2

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A novel sulfur-mediated strategy enables the formation of tellurium-based oxide conduction channels for high-performance amorphous p-type thin-film transistors. This breakthrough allows for ultralow-temperature processing, crucial for flexible electronics and complementary metal-oxide semiconductor (CMOS) technologies.

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Electronics Engineering

Background:

  • Amorphous p-type oxides are critical for advanced flexible and scalable complementary metal-oxide semiconductor (CMOS) technologies.
  • Tellurium-based oxides (Te-TeOx) offer potential due to embedded Te-Te conduction networks but face challenges in controlled formation for optimal hole transport and dopability at low thermal budgets.

Purpose of the Study:

  • To develop a method for controlled formation of Te-Te conduction channels in amorphous tellurium-based oxides.
  • To enable high-performance p-channel thin-film transistors (TFTs) processed at ultralow temperatures.

Main Methods:

  • A sulfur-mediated redox strategy was employed to modulate the local bonding environment.
  • This involved TeO2 dissociation and partial Te4+ reduction to promote short-chain Te-Te network formation.

Main Results:

  • High-performance p-channel TFTs were fabricated with an average hole mobility of 11.5 cm2 V-1 s-1 and on/off ratios of ~106.
  • The process was achieved at an ultralow temperature of 120°C with high uniformity and reproducibility.
  • Integrated all-oxide CMOS circuits, including inverters and ring oscillators, demonstrated successful functionality on flexible and rigid substrates.

Conclusions:

  • The sulfur-mediated strategy effectively promotes the formation of Te-Te conduction networks, enabling ultralow-temperature processing of high-performance amorphous p-type oxides.
  • This approach paves the way for next-generation flexible and scalable electronic devices and circuits.