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Multi-Terraced Stacking Engineering in Moiré Ferroelectric Superlattice
Luqi Wei1, Yunzhe Zheng1, Zhao Guan1
1Key Laboratory of Polar Materials and Devices (Ministry of Education), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Advanced Materials (Deerfield Beach, Fla.)
|October 28, 2025
Summary
Boundary confinement engineering enables atomic-scale control of moiré ferroelectricity in WSe2, overcoming topological constraints for nonvolatile switching in ultracompact electronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Emergent moiré ferroelectricity offers atomic-scale ferroelectricity for ultracompact electronics.
- Visualizing and controlling the complex domain network in moiré ferroelectrics is challenging.
- Topological constraints in moiré superlattices hinder nonvolatile switching.
Purpose of the Study:
- To develop a method for precise domain engineering in moiré ferroelectrics.
- To enable nonvolatile polarization switching by overcoming topological barriers.
- To elucidate the atomic structure-polarization relationship in moiré systems.
Main Methods:
- Controlled boundary confinement engineering in moiré superlattices.
- Scanning probe microscopy (SPM) for atomic-resolution imaging.
- Spherical aberration-corrected transmission electron microscopy (s-TEM) for cross-sectional analysis.
Main Results:
- Atomic-resolution observation of WSe2 stacking (R-, H-stacking) and domain walls.
- Demonstration of nonvolatile polarization switching enabled by boundary confinement.
- Elimination of domain node pinning and enhanced domain wall mobility.
Conclusions:
- Boundary confinement engineering effectively disrupts topological constraints in moiré ferroelectrics.
- Precise control over domain structure facilitates nonvolatile switching.
- Findings provide insights for designing and manipulating moiré ferroelectrics for device applications.
