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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
All-Optically Controlled Terahertz Modulation by Silicon-Grown CdSe/CdZnS Colloidal Quantum Wells
Reyihanguli Tudi1, Zhongxin Zhang1, Xintian Song1
1Xinjiang Key Laboratory for Luminescence Minerals and Optical Functional Materials, School of Physics and Electronic Engineering, Xinjiang Normal University, Urumqi 830054, China.
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The CdSe/CdZnS colloidal quantum wells, with their exceptionally high carrier mobility and ultrafast response characteristics, emerge as highly promising candidate material for high-performance active terahertz modulators-indispensable core components critical for next-generation communication technologies. A high-performance, cost-effective terahertz modulator was fabricated through spin-coating CdSe(4ML)/CdZnS nanosheets onto a silicon substrate. This all-optical device demonstrates broadband modulation capabilities (0.25-1.4 THz), achieving a remarkable modulation depth of 87.6% at a low power density of 2 W/cm2. Demonstrating pump-power-efficient terahertz modulation characteristics, this core-shell composite shows immediate applicability in terahertz communication systems and non-destructive testing equipment.

