Research on Open Magnetic Shielding Packaging for STT and SOT-MRAM

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Physics

Background:

• Magneto-resistive random access memory (MRAM) offers high reliability and speed, making it industrially significant.
• The magnetic tunnel junction (MTJ) core of MRAM is vulnerable to external magnetic fields, limiting its use in harsh environments.

Purpose of the Study:

• To propose and evaluate an innovative open magnetic shielding structure for MRAM.
• To enhance the anti-magnetic capabilities and reliability of both spin-transfer torque (STT) and spin-orbit torque (SOT) MRAM.

Main Methods:

• Development of an open magnetic shielding structure.
• Utilizing finite element magnetic simulations to assess shielding efficacy against in-plane and perpendicular magnetic fields.
• Evaluating performance under varying packaging structure heights.

Main Results:

• The proposed structure significantly reduces magnetic field intensity at the chip level: down to 1‱ for in-plane fields and 2‱ for perpendicular fields (40 mT applied).
• The shielding performance is independent of packaging structure height, ensuring broad compatibility.
• Demonstrated remarkable shielding efficacy against both in-plane and perpendicular magnetic fields.

Conclusions:

• The open magnetic shielding structure effectively protects MRAM from external magnetic interference.
• This design significantly enhances MRAM's anti-magnetic capabilities, crucial for demanding applications.
• The research provides a viable solution for highly reliable magnetic shielding in MRAM packaging.