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Towards Advanced Materials: Functional Perspectives of Co-Doped ZnO Thin Films
Mariuca Gartner1, Mariana Chelu1, Anna Szekeres2
1Institute of Physical Chemistry "Ilie Murgulescu", 202 Splaiul Independentei, 060021 Bucharest, Romania.
None:
Zinc oxide (ZnO) thin films have attracted increasing attention as promising materials for sensing applications due to their wide band gap, high exciton binding energy, and remarkable chemical stability. However, the inherent limitations of pure ZnO, such as moderate sensitivity, selectivity, and relatively high operating temperatures, limit its widespread use in advanced sensing technologies. Co-doping, or dual doping with two distinct elements, has emerged as an effective strategy to overcome these challenges by synergistically tailoring the structural, electronic, and surface properties of ZnO thin films. This review provides a comprehensive overview of recent advances in the development of co-doped ZnO thin films for sensing applications. The focus is on the role of different combinations of dopants, including transition metals, rare earth elements, and non-metals, in modulating the charge carrier concentration, oxygen vacancy density, and adsorption dynamics. These effects collectively enhance the sensing properties and long-term stability and reduce detection limits. The analysis highlights the correlations between synthesis methods, dopant incorporation mechanisms, and resulting sensor performance. Key challenges such as dopant clustering, reproducibility, and scalability are discussed, along with emerging opportunities in flexible room-temperature sensor platforms. Overall, it has been demonstrated that co-doped ZnO thin films represent a versatile and tunable class of sensing materials with strong potential for next-generation environmental and biomedical monitoring.
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