Structural and Optoelectronic Parameters of a Cobalt-Doped Molybdenum Disulfide Diode-Based Photodetector

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Molybdenum disulfide (MoS₂) is a promising 2D material for optoelectronics.
• Understanding the impact of doping on MoS₂ properties is crucial for device optimization.

Purpose of the Study:

• To investigate the structural, electrical, and optical properties of pristine and Cobalt (Co)-doped MoS₂ nanosheets.
• To evaluate the performance enhancement of Co-doped MoS₂ in optoelectronic devices, particularly photodetectors.

Main Methods:

• High-resolution transmission electron microscopy (HRTEM) for structural analysis.
• X-ray diffraction (XRD) for crystal structure determination.
• Current-voltage (I-V) and ultraviolet-visible (UV-vis) spectroscopy for electrical and optical property assessment.

Main Results:

• Co-doping enhances light absorption by increasing active sites and reduces the bandgap of MoS₂.
• Co-doped MoS₂ devices exhibit improved diode characteristics, including ideality factor, saturation current, and junction resistance.
• Photodetectors based on Co-doped MoS₂ show significantly enhanced photocurrent generation, responsivity, and detectivity.

Conclusions:

• Cobalt doping is an effective strategy to improve the optoelectronic properties of MoS₂ nanosheets.
• Co-doped MoS₂ demonstrates superior performance for photodetection applications due to enhanced photon-to-electron conversion efficiency.
• The findings highlight the potential of Co-doped MoS₂ for next-generation optoelectronic devices.