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Internal silicon laser processing with picosecond double pulses.

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|November 4, 2025

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Using picosecond double pulses with controlled delays and polarization overcomes nonlinear propagation challenges for precise in-volume silicon modifications. This method enables efficient energy deposition and control over modification size for internal functionalization.

Area of Science:

Materials Science
Optics and Photonics
Laser Physics

Background:

Nonlinear propagation effects impede precise laser inscription within silicon using ultrashort pulses.
Achieving controlled in-volume modifications in silicon requires overcoming these propagation challenges.

Purpose of the Study:

To investigate the use of picosecond double pulses for overcoming nonlinear propagation limitations in silicon.
To explore the influence of pulse delay, polarization, and energy balance on in-volume modifications.

Main Methods:

Employing single-digit picosecond double pulses with variable picosecond pulse-to-pulse delays.
Investigating the effects of perpendicular and parallel polarization configurations.
Controlling energy deposition efficiency and modification size by adjusting inter-pulse energy balance and total energy.

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Main Results:

Temporally separated double pulses with perpendicular polarization significantly enhance in-volume modifications.
Temporally overlapping pulses with parallel polarization lead to detrimental interference, hindering modification.
Energy deposition efficiency and modification size are tunable via pulse energy adjustments.

Conclusions:

Picosecond double-pulse irradiation is a viable strategy for precise, repeatable in-volume modifications in silicon.
Controlling pulse delay and polarization is crucial for effective laser inscription in silicon.
This technique offers a promising route for the internal functionalization of silicon devices.