InAs/InAlGaAs/(001) InP quantum dot lasers achieving >100°C continuous-wave operation via uniformity-enhanced MOCVD...

Based on an optimized InAs/(001) InP quantum dot (QD) growth process, we systematically characterized 1.55 μm InAs QD lasers and demonstrated markedly improved high-temperature operation. Continuous-wave lasing above 105°C was achieved both in Fabry-Pérot (FP) devices with five QD layers in the broad-area (BA) geometry and nine QD layers in a narrow-ridge geometry. Under pulsed operation, these FP-BA lasers sustained lasing up to 120°C, and it reached a low threshold current density of 296 A/cm² (59.2 A/cm² per QD layer).