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Updated: May 4, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
On the feasibility of quantum teleportation protocols implemented with silicon devices
Junghee Ryu1,2, Hoon Ryu3
1Center for Quantum Information R&D, Korea Institute of Science and Technology Information (KISTI), Daejeon 34141, Republic of Korea.
Abstract:
With recent experimental advancements demonstrating high-fidelity universal logic gates and basic programmability, silicon-based spin quantum bits (qubits) have emerged as promising candidates for scalable quantum computing. However, implementation of more complex quantum information protocols with many qubits still remains a critical challenge for realization of practical programmability in silicon devices. In this study, we present a computational investigation of entanglement-based quantum information applications implemented on an electrically defined quantum dot structure in silicon. Using in-house multi-scale simulations based on tight-binding calculations augmented with classical physics with bulk properties, we model a five quantum dot system that can create up to five electron spin qubits, and discuss details of control engineering needed to implement single-qubit rotations and two-qubit logic operations in a programmable manner. Using these elementary operations, we design a five-qubit quantum teleportation protocol and computationally verify its end-to-end operation including a simple but clear analysis on how the designed circuit can be affected by charge noise. With engineering details that are not well uncovered by experiments, our results demonstrate the advanced programmability of silicon quantum dot systems, delivering the practical guidelines for potential designs of quantum information processes based on electrically defined silicon quantum dot structures.
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