In Situ Red-Emission Aqueous AIGS@PVA Quantum Dots Backlight Film for White-LEDs
Xihan Luo1, Yuhui Dong1, Weichao Qi1
1MIIT Key Laboratory of Advanced Display Materials and Devices, Jiangsu Province Engineering Research Center of Quantum Dot Display, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
Abstract:
Non-toxic Ag-In-Ga-S (AIGS) quantum dots (QDs) backlight film has garnered significant attention in white-LEDs (WLEDs) as down-conversion luminescent materials. However, current research on AIGS-based backlight films still faces challenges like low photoluminescence quantum yield (PLQY), polymer incompatibility, etc. This study demonstrates an innovative in situ aqueous-phase synthesis method for producing a high PLQY red-emission AIGS@PVA backlight film. The red-emission AIGS QDs are grown in situ in a PVA matrix, while the surface defects are simultaneously passivated by PVA. Red-emission AIGS@PVA films with a PLQY of 82% are successfully fabricated, exhibiting excellent uniformity, surface flatness, and flexibility. Furthermore, a WLED is successfully fabricated by stacking the red-emission AIGS@PVA film on a green-emission film through the excitation of a blue chip. The WLED achieved a relatively standard white light with CIE chromaticity coordinates of (0.32, 0.32), color temperature of 6403 K, and color rendering index (CRI) of 94. The realization of high PLQY in situ aqueous-phase film will push the practical application of backlight film.
