Related Experiment Video
Updated: Jan 11, 2026
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Controlling the Electrochemical Metallization in a Nanocellulose-Based Resistive Memory Device through Interface
1Department of Chemistry, Indian Institute of Science Education and Research Pune, Pune, Maharashtra 411008, India.
Abstract:
Biomaterials hold great potential for the development of green electronics owing to their biocompatibility, biodegradability, and sustainability. With an immense amount of data generation and digitization, the urge for emerging memory devices has also spiked in recent times. Herein, we present an environment-friendly memory device comprising a nanocellulose/zinc oxide (ZnO) bilayer for stable resistive memory application, where silver (Ag) and fluorine-doped tin oxide (FTO) are used as the active and counter electrodes, respectively. Steady bipolar resistive memory characteristics could be observed with the current ON/OFF ratio > 102 and at a low switching voltage (less than ±0.4 V). The switching mechanism could be hypothesized with the Ag+ migration from the active electrode, which could be controlled by the introduction of a ZnO layer resulting in an interfacial electric field. The Ag/nanocellulose/ZnO/FTO device could also retain the resistive memory features after water treatment and 30 days of stowing in vacuum.
