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Low-Power Ionically Tunable Bilayer MoS2 Synaptic Transistors.

Or Levit1, Emanuel Ber1, Yair Keller1

  • 1Viterbi Faculty of Electrical and Computer Engineering, Technion─Israel Institute of Technology, Haifa 32000, Israel.

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|November 17, 2025
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Summary
This summary is machine-generated.

We developed novel electrochemical random-access memory (ECRAM) transistors using 2D bilayer MoS2 channels. These devices enable highly linear, energy-efficient synaptic weight modulation for neuromorphic computing with ultra-low leakage currents.

Keywords:
electrochemical random-access memoryneuromorphic devicesnon-volatile memorytwo-dimensional semiconductors

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electronics

Background:

  • Electrochemical random-access memory (ECRAM) offers linear, energy-efficient conductance modulation for neuromorphic applications.
  • Two-dimensional (2D) materials are promising for advanced electronic devices due to their unique properties.

Purpose of the Study:

  • To demonstrate inorganic ECRAM transistors utilizing 2D bilayer MoS2 channels.
  • To investigate the potential of these devices for synaptic weight applications in neuromorphic computing.

Main Methods:

  • Fabrication of ECRAM transistors with 2D bilayer MoS2 channels.
  • Characterization of device performance, including ionic and electrostatic gating.
  • Evaluation of synaptic training characteristics using standard memristive metrics.

Main Results:

  • Devices exhibited both electrochemical and electrostatic gating capabilities.
  • Achieved ultra-low idle-state leakage currents below 100 fA.
  • Demonstrated highly linear and symmetric training characteristics, suitable for synaptic emulation.

Conclusions:

  • 2D bilayer MoS2 channels enable ECRAM devices with combined ionic and electrostatic gating.
  • These devices show significant potential for power-efficient synaptic electronics in neuromorphic systems.