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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

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Published on: May 22, 2015

Indium-Free Recombination Layer for Perovskite-Based Multijunction-Solar-Cells- with Improved Performance Using

Maryamsadat Heydarian¹, Georgios Loukeris^1,2,3, Martin Bivour¹

¹Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110, Freiburg, Germany.

Small (Weinheim an Der Bergstrasse, Germany)

|November 19, 2025

Summary

Zinc tin oxide (ZTO) is a novel, indium-free recombination layer for perovskite solar cells. This scalable material enhances performance in tandem devices, paving the way for efficient, low-cost photovoltaics.

Keywords:

all‐perovskite tandem solar cell photovoltaics recombination layer tandem solar cells triple‐junction solar cell

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Published on: April 25, 2018

Area of Science:

Materials Science
Renewable Energy
Photovoltaics

Background:

Monolithic two-terminal perovskite multijunction solar cells offer high efficiency potential at low cost.
Effective subcell interconnection requires reliable recombination layers.
Current recombination layers often use scarce and expensive materials like gold or indium.

Purpose of the Study:

To develop and evaluate an indium-free recombination layer for perovskite-based multijunction solar cells.
To demonstrate the efficacy of zinc tin oxide (ZTO) as a scalable alternative.
To assess the impact of ZTO on the performance of perovskite tandem solar cells.

Main Methods:

Low-temperature sputtering of zinc tin oxide (ZTO) using scalable in-line sputtering.
Fabrication of perovskite/perovskite/silicon triple-junction and all-perovskite tandem solar cells.
Comparison of ZTO recombination layers with traditional indium tin oxide (ITO) layers.

Main Results:

ZTO was successfully deposited as an indium-free recombination layer via scalable sputtering.
Perovskite tandem solar cells utilizing ZTO showed improved performance.
Open-circuit voltage increases of ~60 mV (triple-junction) and ~30 mV (all-perovskite) were observed with ZTO.

Conclusions:

Low-temperature sputtered ZTO is a viable, high-performance alternative to indium-based recombination layers.
ZTO deposition is non-destructive and compatible with scalable manufacturing processes.
This advancement supports the commercial viability of next-generation perovskite multijunction solar cells.