Tunable Thermal Emitters Based on Femtosecond Laser Structured SiC for High Power Chip Heat Dissipation

Efficient thermal management based on wide-bandgap semiconductor materials plays a crucial role in enhancing the performance of high power devices aimed at next-generation information technology. Silicon carbide (SiC), a representative wide-bandgap semiconductor, requires controllable spectral modulation for efficient thermal management. However, the intrinsic reststrahlen band of SiC restricts its thermal emission in the atmospheric window. Here, tunable thermal emitters are fabricated on SiC by femtosecond laser hybrid technology, achieving a high emissivity of 97.4% in the range of 2.5-16 μm. As a proof of concept, the thermal emitter can be introduced on the chip for heat dissipation with a decrease of 6.6 °C. This work provides a new perspective on thermal radiation regulation of wide-bandgap semiconductor materials and demonstrates potential applications in chip heat dissipation.