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Unraveling In-Plane Crystallographic Anisotropy-Dependent Memory Performance In Van Der Waals α-In2Se3 Ferroelectric

Jong-Hyun Kim1, Seung-Hwan Kim2, Hyeong-Kyu Jin3

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Advanced Materials (Deerfield Beach, Fla.)
|November 20, 2025
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Ferroelectric semiconductor field-effect transistors (FeS-FETs) using α-In2Se3 show performance variations due to crystal anisotropy. Optimizing source/drain contact alignment along the armchair direction significantly enhances memory device performance.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Devices

Background:

  • Ferroelectric semiconductor field-effect transistors (FeS-FETs) based on α-In2Se3 are promising for non-volatile memory.
  • The in-plane (IP) crystallographic anisotropy of α-In2Se3 causes orientation-dependent memory performance.
  • Source/drain (S/D) contact alignment critically influences FeS-FET behavior.

Purpose of the Study:

  • To investigate the impact of in-plane (IP) anisotropy on ferroelectricity in α-In2Se3 FeS-FETs.
  • To compare the performance of FeS-FETs with S/D contacts aligned along armchair (AC) and zigzag (ZZ) crystallographic directions.
  • To elucidate the electron transport mechanisms responsible for observed performance differences.

Main Methods:

  • Fabrication of α-In2Se3 FeS-FETs with precisely aligned S/D contacts.
  • Electrical characterization of devices with AC-aligned and ZZ-aligned S/D configurations.
  • Analysis of electron transport pathways and Schottky barrier heights.

Main Results:

  • AC-aligned S/D configuration demonstrated a high ferroelectric resistance switching (FRS) ratio (6.42) and on/off current ratio (4.53 × 10^4).
  • ZZ-aligned S/D configuration showed significantly lower FRS ratio (1.05) and on/off ratio (5.25), with negligible memory window.
  • Electron transport along the AC direction involves twisted pathways, while ZZ direction shows straight trajectories, impacting ferroelectric charge screening.

Conclusions:

  • In-plane crystallographic anisotropy of α-In2Se3 directly correlates with its ferroelectric functionality in FeS-FETs.
  • Optimal S/D contact alignment (AC direction) is crucial for maximizing memory performance.
  • Findings provide essential guidelines for designing high-performance α-In2Se3-based FeS-FET memory devices.