Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

880
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
880
Lattice Centering and Coordination Number02:33

Lattice Centering and Coordination Number

11.3K
The structure of a crystalline solid, whether a metal or not, is best described by considering its simplest repeating unit, which is referred to as its unit cell. The unit cell consists of lattice points that represent the locations of atoms or ions. The entire structure then consists of this unit cell repeating in three dimensions. The three different types of unit cells present in the cubic lattice are illustrated in Figure 1.
Types of Unit Cells
Imagine taking a large number of identical...
11.3K
Metallic Solids02:37

Metallic Solids

20.4K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
20.4K
Semiconductors01:22

Semiconductors

1.4K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.4K
Fermi Level Dynamics01:12

Fermi Level Dynamics

629
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
629
Network Covalent Solids02:18

Network Covalent Solids

16.0K
Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
16.0K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

High Electron-Affinity Oxides Intercalation for p-Type Contacts in 2D Semiconductors.

Nano letters·2026
Same author

Strength-ductility synergy in medium-entropy alloys via harnessing trace air in additive manufacturing.

Nature communications·2026
Same author

Breathable, biocompatible, long-term stability Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> bioelectrodes for real-time monitoring of electrophysiological signals.

Nanoscale horizons·2026
Same author

Scalable Reconfigurable Circuits with Double-Gate MoS<sub>2</sub> Transistors.

ACS nano·2026
Same author

Generic logic block based on bias-gated 2D MoS<sub>2</sub> transistors.

Nature communications·2026
Same author

Announcing the <i>Nanoscale Advances</i> Paper Prize.

Nanoscale advances·2026
Same journal

Erratum for the Research Article "Detecting supramolecular organic nanoparticles during heat wave".

Science (New York, N.Y.)·2026
Same journal

Local signals, systemic decline.

Science (New York, N.Y.)·2026
Same journal

The mechanics of liver regeneration.

Science (New York, N.Y.)·2026
Same journal

Computing in a memory with physics.

Science (New York, N.Y.)·2026
Same journal

Retraction.

Science (New York, N.Y.)·2026
Same journal

Making time.

Science (New York, N.Y.)·2026
See all related articles

Related Experiment Video

Updated: Jan 10, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.7K

Atomic layer bonding contacts in two-dimensional semiconductors.

Li Gao1,2, Zhangyi Chen1,3, Zhenghui Fang1,3

  • 1Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, China.

Science (New York, N.Y.)
|November 20, 2025
PubMed
Summary
This summary is machine-generated.

We developed an atomic layer bonding (ALB) contact for 2D semiconductors, achieving strong coupling and low resistance. This breakthrough surpasses traditional methods, enabling robust electronic device integration.

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.2K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.3K

Related Experiment Videos

Last Updated: Jan 10, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.7K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.2K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.3K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Van der Waals contacts in 2D semiconductors suffer from weak band coupling and low bond strength compared to covalent bonds.
  • This limits their performance and integration into semiconductor devices.
  • Existing contact methods hinder the full potential of 2D materials.

Purpose of the Study:

  • To introduce a novel atomic layer bonding (ALB) contact for 2D semiconductors.
  • To achieve strong band coupling and high interfacial cohesion.
  • To overcome the limitations of Van der Waals contacts.

Main Methods:

  • Establishing a metallic coherent bonding interface between transition-metal dichalcogenides and metals.
  • Utilizing atomic layer bonding (ALB) for contact formation.
  • Characterizing contact resistance and thermomechanical stability.

Main Results:

  • Achieved ultralow contact resistance of 70 ohm-micrometers in monolayer molybdenum disulfide and gold.
  • Demonstrated superb thermomechanical stability up to 400°C.
  • Obtained a maximum on-current of 1.1 milliamperes per micrometer after high-temperature annealing.

Conclusions:

  • The ALB contact exhibits strong band coupling and high interfacial cohesion.
  • ALB contact performance is comparable to covalent bonds and superior to other reported configurations.
  • The developed ALB contact meets industrial integration requirements for 2D semiconductor devices.