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Related Concept Videos

Olefin Metathesis Polymerization: Overview01:13

Olefin Metathesis Polymerization: Overview

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Recently, the development of olefin metathesis polymerization advanced the field of polymer synthesis. Simply put, the reorganization of substituents on their double bonds between two olefins in the presence of a catalyst is known as the olefin metathesis reaction. The use of metathesis reaction for polymer synthesis is called olefin metathesis polymerization.
Ruthenium-based Grubbs catalyst is the most commonly used catalyst for olefin metathesis polymerization. Grubbs catalyst consists of a...
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Olefin Metathesis Polymerization: Ring-Opening Metathesis Polymerization (ROMP)01:16

Olefin Metathesis Polymerization: Ring-Opening Metathesis Polymerization (ROMP)

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Ring-opening metathesis polymerization or ROMP involves strained cycloalkenes as starting materials. The mechanism of ROMP proceeds by reacting cycloalkene with Grubbs catalyst to give metallacyclobutane intermediate which undergoes a ring-opening reaction to form new carbene. The new carbene reacts with another molecule of cycloalkene. Repetition of these steps leads to the formation of an unsaturated open-chain polymer product. All these steps are reversible, however, relieving the ring...
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Alkenes via Reductive Coupling of Aldehydes or Ketones: McMurry Reaction01:22

Alkenes via Reductive Coupling of Aldehydes or Ketones: McMurry Reaction

2.3K
The radical dimerization of ketones or aldehydes gives vicinal diols through a pinacol coupling reaction. However, the behavior of titanium metals used for the reaction as a source of electrons is unusual. When the reaction is carried out in the presence of titanium, diols can be isolated at low temperatures. Else titanium further reacts with diols, forming alkenes through the McMurry reaction.
2.3K

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Related Experiment Video

Updated: Jan 10, 2026

The Synthesis, Characterization and Reactivity of a Series of Ruthenium N-triphosPh Complexes
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The Synthesis, Characterization and Reactivity of a Series of Ruthenium N-triphosPh Complexes

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Small and Simple Molecular Structure Based Thermally Stable Ruthenium Precursor in Advancing Ruthenium ALD Process

Hideaki Nakatsubo1,2, Debananda Mohapatra1, Eun-Soo Lee3,4

  • 1Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|November 24, 2025
PubMed
Summary

A novel Ruthenium (Ru) precursor enables high-temperature Atomic Layer Deposition (ALD) for advanced interconnects. This Ru ALD process yields dense, low-resistivity films with excellent substrate selectivity, crucial for next-generation electronics.

Keywords:
Ru atomic layer deposition (ALD‐Ru)advanced interconnectsbulk‐like resistivityhigh growth per cycle (GPC)high thermal stabilitynovel Ru precursorselectivity

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Synthesis and Evaluation of a Ruthenium-based Mitochondrial Calcium Uptake Inhibitor
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Heterogeneous Removal of Water-Soluble Ruthenium Olefin Metathesis Catalyst from Aqueous Media Via Host-Guest Interaction
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Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemical Engineering

Background:

  • Copper interconnects face limitations in advanced semiconductor technology.
  • Ruthenium (Ru) via Atomic Layer Deposition (ALD) is a promising alternative for interconnects.
  • Development of suitable Ru precursors is critical for enabling high-performance ALD-Ru processes.

Purpose of the Study:

  • To introduce a new, small molecular Ruthenium precursor, [Ru(trimethylenemethane (TMM))(p-cymene)], for ALD.
  • To investigate the high-temperature ALD-Ru process characteristics using this precursor.
  • To evaluate the film properties, substrate selectivity, and underlying mechanisms for advanced interconnect applications.

Main Methods:

  • High-temperature Atomic Layer Deposition (ALD) using the novel [Ru(TMM)(p-cymene)] precursor.
  • Characterization of film growth, purity, and electrical resistivity (e.g., using four-point probe).
  • Substrate selectivity studies on TiN and SiO2.
  • Computational analyses (e.g., adsorption behavior, fragmentation energy) and advanced crystallography (e.g., electron backscatter diffraction).

Main Results:

  • Achieved high growth per cycle (≈1.28 Å/cycle) and short incubation (≈8 cycles) on TiN at high temperatures.
  • Deposited Ru films exhibited low impurity levels and resistivities as low as 10.6 µΩ cm without postannealing.
  • Demonstrated excellent substrate selectivity, with no Ru nucleation observed on SiO2 even after 1000 cycles.
  • Computational and crystallographic analyses elucidated the precursor's thermal stability, selective adsorption, and grain growth mechanisms contributing to low resistivity.

Conclusions:

  • The novel [Ru(TMM)(p-cymene)] precursor enables a robust, high-temperature ALD-Ru process.
  • The process yields high-quality Ru films with properties suitable for advanced interconnects.
  • This Ru precursor is a strong candidate for scalable and durable ALD-Ru processes in next-generation semiconductor manufacturing.