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Updated: Jan 10, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Non-Perturbative Oxygen Vacancy Mapping via Independently-Contacted, Reciprocally-Switching Double-Layer ECRAM for

Seungmin Han1, Hyunjeong Kwak1, Jungho Lee2

  • 1Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea.

Small (Weinheim an Der Bergstrasse, Germany)
|November 24, 2025
PubMed

Keywords:
AI acceleratorECRAManalog AI computingelectrochemical random‐access memoryin‐memory computing

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