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Electric-Field-Induced Increase in Permittivity in Uniaxial Antiferroelectric K3Nb3B2O12 Polycrystalline Ceramics
Toshiya Uohashi1, Yoshinobu Hirose2, Koji Maruyama2
1Department of Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan.
Abstract:
Potassium niobate borate K3Nb3B2O12 exhibits uniaxial antiferroelectricity, where polarization flipping occurs along only one crystallographic direction, while a linear dielectric response is observed in perpendicular directions. The present study investigates the temperature dependence of dielectric permittivity and electric-field-induced polarization of K3Nb3B2O12 polycrystalline ceramics to clarify its potential for high-voltage applications. The results demonstrated a high relative permittivity of approximately 130 at room temperature and its enhancement under an applied electric field. Notably, the onset electric field for permittivity boosting was found to be markedly smaller than that observed in typical uniaxial antiferroelectrics. This study paves the way for the development of next-generation capacitors for power electronics with uniaxial antiferroelectricity.
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