Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

1.4K
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
1.4K
Design Example: Strain Gauge Bridge or Wheatstone Bridge01:15

Design Example: Strain Gauge Bridge or Wheatstone Bridge

934
The utilization of strain gauges as transducers for converting mechanical strain into electrical signals is a common practice in various engineering applications. These strain gauges are frequently integrated into Wheatstone bridge circuits to accurately measure parameters such as force or pressure. Within this context, each element within the circuit exhibits a resistance that undergoes subtle variations when subjected to mechanical strain. The primary objective is to convert minuscule...
934
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

528
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
528
MOSFET Amplifiers01:17

MOSFET Amplifiers

467
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
467
Biasing of FET01:22

Biasing of FET

659
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
659
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

1.1K
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
1.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Epigenetic modulation of the JAK2-STAT3 signaling pathway in osteoporosis: non-coding RNA networks as therapeutic targets.

Journal of translational medicine·2026
Same author

Development and preliminary validation of a WeChat-based auditory-speech rehabilitation system for Mandarin-speaking cochlear implant users.

Digital health·2026
Same author

An Iron-Complement Network Model of Thromboinflammation and Humoral Immune Remodeling in Severe COVID-19.

Current issues in molecular biology·2026
Same author

Ni-Doped SnO<sub>2</sub> Gas Sensor Array Enabled High-Randomness PUF for Hardware Security Applications.

Micromachines·2026
Same author

Meloidogyne vitis infecting mulberry (Morus alba L.) in Yunnan, China: morphology, molecular identification, and pathogenicity.

BMC plant biology·2026
Same author

Clotrimazole-Mediated Autophagy to Protect Against Cisplatin-Induced Ototoxicity via the AMPK/mTOR/TFEB Pathway in Mice.

Antioxidants & redox signaling·2026

Related Experiment Video

Updated: Jan 10, 2026

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.7K

Design of a Bandgap Reference Circuit for MEMS Integrated Accelerometers.

Wenbo Zhang1, Shanshan Wang2, Yihang Wang3

  • 1School of Astronautics, Harbin Institute of Technology, Harbin 150001, China.

Micromachines
|November 27, 2025
PubMed
Summary

This study introduces a novel operational amplifier (op-amp) circuit for integrated accelerometers, offering high precision reference voltage, wide voltage range, and low power consumption. The design achieves excellent performance metrics, balancing drive capability with stability for demanding applications.

Keywords:
bandgap referenceclass-AB bufferintegrated accelerometerslow-power operational amplifiernoise suppression

More Related Videos

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.5K
Using Micro-Electro-Mechanical Systems MEMS to Develop Diagnostic Tools
16:05

Using Micro-Electro-Mechanical Systems MEMS to Develop Diagnostic Tools

Published on: October 1, 2007

8.0K

Related Experiment Videos

Last Updated: Jan 10, 2026

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.7K
Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
15:25

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters

Published on: February 4, 2018

6.5K
Using Micro-Electro-Mechanical Systems MEMS to Develop Diagnostic Tools
16:05

Using Micro-Electro-Mechanical Systems MEMS to Develop Diagnostic Tools

Published on: October 1, 2007

8.0K

Area of Science:

  • Electrical Engineering
  • Microelectronics
  • Analog Circuit Design

Background:

  • Integrated accelerometers require stable, high-precision reference voltages.
  • Existing designs often struggle to balance wide supply voltage ranges, high current drive, and low power consumption.
  • CMOS/BiCMOS technology presents opportunities for advanced circuit solutions.

Purpose of the Study:

  • To propose and validate a novel bandgap reference operational amplifier (op-amp) circuit.
  • To meet stringent requirements for integrated accelerometers, including wide supply voltage, high current drive, and low power.
  • To demonstrate engineering practicality and broad applicability in sensor systems.

Main Methods:

  • Implementation of a CMOS/BiCMOS op-amp circuit.
  • Utilizing a folded-cascode input stage and a Class-AB output stage.
  • Incorporating adaptive output switching, composite frequency compensation, overcurrent protection, and noise suppression techniques.

Main Results:

  • Achieved output swing of 0.2 V~2.8 V with a low-frequency gain of 102~118 dB.
  • Demonstrated a Power Supply Rejection Ratio (PSRR) of 90 dB at 60 Hz and overcurrent protection of ±25 mA.
  • Maintained static current below 150 μA across the supply range, with line/load regulation better than 150 μV/V and 150 μV/mA, respectively.

Conclusions:

  • The proposed op-amp design successfully balances high drive capability and stability under strict power constraints.
  • The circuit is well-suited as a bandgap reference buffer stage for integrated accelerometers.
  • The design exhibits strong engineering practicality and potential for widespread application in microelectronic systems.