Highly Sensitive Si-Based Electrolyte-Gated Transistor Array for Multiplexed Detection of Arboviruses

Multiplexed detection of arboviruses using a 4 × 4 Si-based electrolyte-gated transistor (EGT) array functionalized with specific aptamers has been investigated. The Si-based EGTs were fabricated using conventional Si microfabrication processes. The EGTs showed excellent intrinsic electrical characteristics, including a low threshold voltage of 0.8 V, a sub-threshold swing of 75 mV/dec, and a gate leakage of <10 pA, ensuring uniform device performance with low device-to-device variation. Aptamers specific to the yellow fever virus nonstructural protein 1 (YF), dengue virus nonstructural protein 1 (DN), and chikungunya virus envelope protein 2 (CHK) were functionalized on EGT arrays to evaluate individual and multiplexed detection. In individual-target detections, concentration-dependent negative shifts in threshold voltage were observed, and relevant limits of detection (LOD) as low as 38.6 pg/mL, 95.2 pg/mL, and 1.6 ng/mL were extracted for YF, DN, and CHK, respectively. In multiplexed detections, sensitivities decreased and variations increased relative to the individual responses, resulting in higher LODs. The extracted LODs were 0.2 ng/mL, 0.6 ng/mL, and 2.8 ng/mL for YF, DN, and CHK, respectively, which are lower than those reported for other methods. These results suggest that Si-based EGT arrays are promising as a scalable, low-cost, and highly sensitive biosensing platform for multiplexed arbovirus detection and point-of-care diagnostics.