Evaluation of a Silicon Carbide Static Induction Transistor for High Frequency/High Temperature Sensor Interface...

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Physics

Background:

• Silicon carbide (SiC) devices offer superior performance in harsh environments.
• Existing characterization of SiC Static Induction Transistors (SITs) is limited to lower temperatures.
• Sensor interface circuits require robust components capable of high-frequency and high-temperature operation.

Purpose of the Study:

• To characterize SiC SITs for sensor interface circuits operating up to 100 MHz and 400 °C.
• To develop and validate a high-temperature small-signal model for SiC SITs.
• To establish a foundation for advanced high-temperature, high-frequency electronic circuit development.

Main Methods:

• Experimental measurements of current-voltage characteristics and capacitive parameters from 25 °C to 400 °C.
• Extrapolation of transconductance (g_m) and development of a small-signal model.
• Comparison of simulated scattering parameters against measured data using circuit simulation tools.

Main Results:

• Strong agreement between measured and simulated scattering parameters (<0.1 dB difference at 400 °C, 20-100 MHz).
• Average transition frequency (f_t) of 197.8 MHz from measurements, closely matching the simulated 200 MHz.
• Successful characterization of SiC SITs at temperatures exceeding 100 °C, a first in published literature.

Conclusions:

• The developed high-temperature SiC SIT model accurately predicts device behavior up to 400 °C.
• SiC SITs are suitable for high-frequency sensor interface circuits operating in extreme temperature conditions.
• This work enables further innovation in high-temperature semiconductor electronics.