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2D Material-Based Memristor Arrays for Flexible and Thermally Stable Neuromorphic Applications.
Seunghyeon Ji1, Jeongkeun Kim1, Juyeong Hong1
1School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea.
Small (Weinheim an Der Bergstrasse, Germany)
|November 27, 2025
Summary
This study demonstrates a reliable, large-area memristor array using an Al2O3/MoS2/graphene structure. The device shows promise for flexible electronics and neuromorphic computing due to its thermal durability and mechanical stability.
Area of Science:
- Materials Science
- Nanotechnology
- Electrical Engineering
Background:
- Memristors are crucial for advanced computing but face challenges in scalability and durability.
- Existing 2D material memristors often suffer from reliability issues under thermal and electrical stress.
Purpose of the Study:
- To develop a large-area, flexible, and thermally durable memristor array.
- To address the limitations of current memristor technologies for neuromorphic and flexible applications.
Main Methods:
- Fabrication of an Al2O3/MoS2/graphene heterostructure memristor array.
- Utilizing Al2O3 and graphene as dual barriers to prevent metal ion diffusion.
- Testing device uniformity, mechanical bending stability, and electrical performance.
Main Results:
- Demonstrated a uniform, large-area memristor array on a 2-inch wafer.
- Achieved stable switching characteristics under mechanical bending down to a 1 mm radius.
- Confirmed suppression of metal ion diffusion, enhancing thermal and electrical reliability.
Conclusions:
- The engineered heterostructure provides a robust design for highly reliable memristors.
- The developed memristor array shows significant potential for neuromorphic computing and flexible electronics.
- This work offers a design strategy for next-generation brain-inspired electronic systems.
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