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Related Concept Videos

P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.6K

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Selenium-Diffusional Precursor Engineering for High-Efficiency CdSeTe Solar Cells with 80% Fill Factor.

Jiao Liu1, Yanjie Gan2, Yiliang Zhou1

  • 1Institute of New Energy Technology, College of Physics and Optoelectronic Engineering, Jinan University, Guangzhou, 510632, China.

Small (Weinheim an Der Bergstrasse, Germany)
|November 30, 2025
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Summary

Optimizing the precursor for graded Cadmium Selenide Telluride (CdSeTe) solar cells enhances device performance. This precursor management strategy improves microstructure and reduces recombination, achieving a 20.6% power conversion efficiency.

Keywords:
CdSeTeabsorberselenium‐diffusional precursorsolar cell

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Area of Science:

  • Materials Science
  • Photovoltaics
  • Thin-film Solar Cells

Background:

  • Graded Cadmium Selenide Telluride (CdSeTe) absorbers are key to exceeding conventional Cadmium Telluride (CdTe) solar cell efficiencies.
  • Device performance is critically dependent on the Se-diffusional precursor's characteristics.

Purpose of the Study:

  • To introduce a precursor-management strategy for optimizing Se diffusion and crystallization in CdSeTe absorbers.
  • To enhance the microstructure and interfacial properties of CdSeTe absorbers.

Main Methods:

  • Incorporation of oxygen and chlorine during Cadmium Selenide (CdSe) precursor processing.
  • Analysis of CdSeTe absorber microstructure, interfacial voids, and surface-potential fluctuations.
  • Fabrication and characterization of solar cell devices.

Main Results:

  • Improved CdSeTe absorber microstructure and suppressed buried interfacial voids.
  • Diminished surface-potential fluctuations, leading to reduced interfacial recombination.
  • Achieved a champion power conversion efficiency of 20.6% with excellent VOC, JSC, and FF.

Conclusions:

  • Precursor chemistry significantly impacts the performance of graded-absorber photovoltaics.
  • The developed precursor-management strategy is effective in advancing CdSeTe solar cell technology.
  • This approach offers a pathway to higher efficiency in thin-film solar cells.