Third-order nonlinearity-enabled ultrafast photonic diode based on a SnS&CAS tandem absorber

Area of Science:

• Photonics and Materials Science
• Optoelectronics
• Nonlinear Optics

Background:

• Developing advanced optical devices requires novel materials with unique nonlinear properties.
• Photonic diodes are crucial components for controlling light signals in optical circuits.
• Low-dimensional materials offer promising avenues for high-performance optoelectronic applications.

Purpose of the Study:

• To develop a high-speed photonic diode utilizing the third-order nonlinearity of tin sulfide nanosheets (SnS NSs) and copper antimony sulfide quantum dots (CAS QDs).
• To investigate and validate the non-reciprocal transmission characteristics of the developed photonic diode.
• To explore the potential of stacked low-dimensional materials for next-generation photonic devices.

Main Methods:

• Fabrication of a photonic diode incorporating SnS NSs and CAS QDs.
• Simulation of nonlinear transmission characteristics using a nonlinear transmission model.
• Experimental validation using Z-Scan and P-Scan techniques to measure optical nonlinearities and transmission.

Main Results:

• Observation of significant non-reciprocal transmission with a maximum non-reciprocal factor (NRF) of 5.78 dB.
• Demonstration of an ultrafast response time below 1 picosecond (ps) in the visible-near-infrared (VIS-NIR) band.
• Capability for optical modulation at frequencies up to hundreds of gigahertz (GHz).

Conclusions:

• The developed photonic diode exhibits promising performance for high-speed optical applications.
• Stacked low-dimensional materials like SnS NSs and CAS QDs are effective for creating advanced photonic devices.
• This research provides a foundation for future designs of novel photonic devices with enhanced functionalities.