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Updated: Jan 9, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
A Van der Waals Material Exhibiting Room Temperature Broken Inversion Symmetry with Ferroelectricity
Fabia F Athena1,2, Cooper A Voigt3, Mengkun Tian4
1School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332., USA.
Abstract:
Since the initial synthesis of van der Waals 2D indium selenide is first documented in 1957, five distinct polymorphs and their corresponding polytypes are identified. In this study, a unique phase of indium selenide is reported via Scanning Transmission Electron Microscopy (STEM) analysis in the synthesized large-area films - which is named the phase. The quintuple layers of the phase, characterized by a unique zigzag atomic configuration with unequal indium-selenium bond lengths from the middle selenium atom, are distinct from any other previously reported phase of indium selenide. Cross-sectional STEM analysis has revealed that the layers exhibit intralayer shifting. It is found that indium selenide films with layers display electric-field-induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking of the inversion symmetry. Experimental observations of nonlinear optical phenomena - Second Harmonic Generation (SHG) responses further support this conclusion. This study reports a phase of indium selenide showing ferroelectricity over large areas at room temperature in a low-dimensional limit.
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