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Updated: Mar 7, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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Published on: April 8, 2018

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack.

Lance Fernandes¹, Stuart Wodzro¹, Prasanna Venkatesan¹

¹School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

|March 5, 2026

Summary

This summary is machine-generated.

Ferroelectric field-effect transistors (FeFETs) with laminated gate stacks show significant radiation resilience in vertical NAND technology. These FeFETs offer a promising solution for reliable solid-state storage in demanding environments.

Keywords:

ferroelectric NAND large memory window reliability γ radiation

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Area of Science:

Materials Science
Electrical Engineering
Semiconductor Physics

Background:

NAND flash memory is crucial for AI but susceptible to radiation-induced threshold-voltage (Vth) degradation.
This degradation poses reliability challenges for space and defense applications.

Purpose of the Study:

To investigate the radiation resilience of ferroelectric field-effect transistors (FeFETs) in vertical NAND technology.
To evaluate FeFETs with laminated gate stacks as a radiation-hardened storage solution.

Main Methods:

Fabrication of vertical NAND-compatible laminated poly-silicon-channel FeFETs with a Hf0.5Zr0.5O2/Al2O3/Hf0.5Zr0.5O2 stack.
Testing of FeFETs under total ionizing dose (TID) up to 10 Mrad(air).
Analysis of threshold-voltage (Vth) shifts and memory window retention.
Technology computer-aided design (TCAD) modeling to understand trap behavior.

Main Results:

Laminated FeFETs maintained a full memory window and robust switching up to 10 Mrad(air).
Negligible TID-induced drift was observed in programmed and erased states after 1 Mrad(air).
The erased state showed approximately 2 V degradation at 10 Mrad(air), attributed to state-dependent traps.
FeFETs demonstrated approximately 30-fold lower Vth degradation per unit dose compared to charge-trap NAND.

Conclusions:

Laminated FeFETs offer superior radiation resilience compared to traditional charge-trap NAND.
FeFETs with laminated gate stacks are promising candidates for radiation-hardened solid-state storage in space and defense applications.