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Analysis of Superjunction MOSFET (CoolMOS™) Concept Limitations-Part I: Theory

Zbigniew Lisik¹, Jacek Podgórski¹

¹Department of Semiconductor and Optoelectronic Devices, Lodz University of Technology, Aleje Politechniki 8, 93-590 Lodz, Poland.

Materials (Basel, Switzerland)

|December 11, 2025

Summary

This study reveals limitations in the CoolMOS™ power device concept, showing the superjunction effect is not inherent and requires specific electric field thresholds. These findings address unmet expectations for high-voltage alleviation in unipolar power devices.

Area of Science:

Semiconductor Physics
Power Electronics

Background:

CoolMOS™ was theorized to overcome high-voltage limitations in unipolar power devices.
Expectations for CoolMOS™ performance have not been fully realized in practice.

Purpose of the Study:

To identify and analyze the limitations of the CoolMOS™ concept.
To investigate the theoretical and physical constraints of superjunction technology in power transistors.

Main Methods:

Theoretical analysis of high-voltage superjunction principles.
Numerical investigations of CoolMOS™ structures based on VDMOS technology.

Main Results:

The superjunction effect is not an inherent feature of the meander-like p-n junction in CoolMOS™.
SuperJunction Mode (SJM) activation is dependent on reaching a threshold electric field (Eth).
Physical and technological limitations of CoolMOS™ were identified through numerical simulations.

Conclusions:

The theoretical potential of CoolMOS™ for high-voltage alleviation is constrained by specific operational conditions.
Further research is needed to address the identified limitations for improved device performance.

Keywords:

MOS devices device performance optimization power MOSFETs power electronics power semiconductor devices superjunction

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