Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Electrostatic Potential Tuning by Low-Volatility Halogenated Additive: Boosting PTQ10-Based Binary OPV to Near 20% Efficiency with High Scalability.

Advanced materials (Deerfield Beach, Fla.)·2026

Same author

Humic acid promotes the formation and stabilization of U(V) during U(VI) reduction: The dual roles of complexation and electron transfer modulation.

Water research·2026

Same author

Ultra-high responsivity 4H-SiC floating-base phototransistors enabled by punch-through induced barrier lowering.

Optics letters·2026

Same author

Rational Asymmetric Acceptor Engineering via Unidirectional Terminal π-Extension and Optimizing Alkyl Branching Sites Affords a Binary Photovoltaic Efficiency of 20.7% by Suppressed Nonradiative Energy Loss.

Advanced materials (Deerfield Beach, Fla.)·2026

Same author

Molecularly Confined Domains Enable Halide-Stable Wide-Bandgap Perovskites.

Advanced materials (Deerfield Beach, Fla.)·2026

Same author

Synergistic Electronic and Steric Engineering of Thiophene Donors in Covalent Organic Frameworks for Efficient CO<sub>2</sub> Photoconversion.

Angewandte Chemie (International ed. in English)·2026

Search research articles

Related Experiment Video

Updated: Jan 8, 2026

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Published on: November 5, 2014

Ultrawide-Bandgap FAPbBr₃-Based Four-Terminal Perovskite/Silicon Tandem Solar Cell.

Yingwu Tao^1,2, Tie Zhang², Daoyong Zhang³

¹State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310058, China.

|December 12, 2025

Summary

This summary is machine-generated.

Ultrawide-bandgap perovskite subcells enhance the stability and efficiency of perovskite/silicon tandem solar cells (TSCs). This strategy shifts power generation to the silicon layer, achieving high overall performance and long-term durability.

Keywords:

FAPbBr3 dual-passivation strategy perovskite/c-Si four-terminal tandem solar cells power contribution ultrawide bandgap

More Related Videos

Flash Infrared Annealing for Perovskite Solar Cell Processing

Flash Infrared Annealing for Perovskite Solar Cell Processing

Published on: February 3, 2021

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers

Published on: September 27, 2018

Related Experiment Videos

Last Updated: Jan 8, 2026

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Published on: November 5, 2014

Flash Infrared Annealing for Perovskite Solar Cell Processing

Flash Infrared Annealing for Perovskite Solar Cell Processing

Published on: February 3, 2021

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers

Published on: September 27, 2018

Area of Science:

Materials Science
Renewable Energy
Photovoltaics

Background:

Perovskite/silicon tandem solar cells (TSCs) are promising for commercialization.
Instability of midbandgap perovskite subcells is a major challenge, contributing significantly to power output and overall device degradation.

Purpose of the Study:

To design and develop an ultrawide-bandgap (UWBG) perovskite subcell for enhanced stability and efficiency in 4T TSCs.
To shift major power generation to the silicon subcell, improving overall device performance and longevity.

Main Methods:

Fabrication of an ultrawide-bandgap (UWBG) FAPbBr3 perovskite subcell (>2.0 eV).
Application of a Lewis base/acid dual-passivation strategy to suppress defects in the FAPbBr3 subcell.
Fabrication and characterization of 4T perovskite/c-Si tandem solar cells.

Main Results:

The UWBG FAPbBr3 subcell achieved 10.76% efficiency with a record open-circuit voltage (Voc) of 1.63 V and a fill factor of 86.67%.
The 4T perovskite/c-Si tandem solar cell reached a certified efficiency of 29.62%, with the silicon subcell contributing 66.61% of the power.
The FAPbBr3 device retained 95% of its initial efficiency after 4800 hours of storage, demonstrating remarkable stability.

Conclusions:

The use of UWBG perovskite subcells offers a viable strategy for developing stable and efficient perovskite/silicon 4T TSCs.
The developed Lewis base/acid dual-passivation technique effectively mitigates defects in perovskite materials.
This research paves the way for the commercialization of highly efficient and durable perovskite/silicon tandem solar technologies.